dimensions inches millimeters h 0.126 0.008 dia.3.2 0.2 dia. j 0.11 2.8 k 0.102 2.6 l 0.10 2.5 m 0.039 1.0 n 0.031 0.8 p 0.020 0.5 dimensions inches millimeters a 0.67 17.0 b 0.49 min. 12.5 min. c 0.39 10.0 d 0.33 8.5 e 0.20 5.0 f 0.18 4.5 g 0.14 3.6 description: a triac is a solid state silicon ac switch which may be gate triggered from an off-state to an on-state for either polarity of applied voltage. features: h full molded isolation package h glass passivation h low off-state leakage h 1500 v rms isolation voltage ul card h excellent surge capability h low on-state voltage h selected for inductive loads applications: h ac switch h motor controls h lighting h tv h ssr ordering information: example: select the complete eight, nine or ten digit part number you desire from the table - i.e. bcr16pm-8 is a 400 volt, 16 ampere triac. v drm inductive type volts code load* bcr16pm 400 -8 l 600 -12 *for inductive load, add l. powerex, inc., 200 hillis street, youngwood, pennsylvania 15697-1800 (412) 925-7272 isolated triac 16 amperes/400-600 volts bcr16pm outline drawing (conforms to to-220f) t-79 a c 5.2 h d 1.2 a e j k p g b n m l l f a connection diagram outline drawing t1 terminal t2 terminal a gate terminal
absolute maxim um ratings, t a = 25 c unless other wise specified ratings symbol bcr16pm-8 BCR16PM-12 units repetitiv e p eak off-state v oltage v drm 400 600 v olts non-repetitiv e p eak off-state v oltage v dsm 500 720 v olts on-state current, t c = 71 c i t(rms) 16 16 amperes non-repetitiv e p eak surge , one cycle (60 hz) i tsm 160 160 amperes i 2 t f or fusing, t = 8.3 msec i 2 t 106.5 106.5 a 2 sec p eak gate p o w er dissipation, 20 m sec p gm 5 5 w atts a v er age gate p o w er dissipation p g(a vg) 0.5 0.5 w atts p eak gate current i gm 2 2 amperes p eak gate v oltage v gm 10 10 v olts stor age t emper ature t stg -40 to 125 -40 to 125 c oper ating j unction t emper ature t j -40 to 125 -40 to 125 c isolation v oltage v iso 1500 1500 v olts w eight C 2 2 gr ams p o were x, inc., 200 hillis street, y oungw ood, p ennsylv ania 15697-1800 (412) 925-7272 bcr16pm isolated t riac 16 amperes/400-600 v olts t-80 electrical and thermal characteristics, t j = 25 c unless other wise specified t est conditions (t rigger mode) bcr16pm characteristics symbol v d r l r g t j min. t yp. max. units gate p ar ameters dc gate t r igger current mt2+ gate+ i fgt i 6v 6 v 330 v 25 c C C 30 ma mt2+ gateC i rgt i 6v 6 v 330 v 25 c C C 30 ma mt2C gateC i rgt iii 6v 6 v 330 v 25 c C C 30 ma dc gate t r igger v oltage mt2+ gate+ v fgt i 6v 6 v 330 v 25 c C C 1.5 v olts mt2+ gateC v rgt i 6v 6 v 330 v 25 c C C 1.5 v olts mt2C gateC v rgt iii 6v 6 v 330 v 25 c C C 1.5 v olts dc gate non-tr igger v oltage all v gd 1/2 v drm C C 125 c 0.2 C C v olts characteristics symbol t est conditions min. t yp. max. units ther mal resistance , j unction-to-case r th(j-c) C C C 3 c/w v oltage C bloc king state i drm gate open circuited, C C 2 ma repetitiv e off-state current v d = v drm , t j = 125 c current C conducting state v tm t c = 25 c , C C 1.6 v olts p eak on-state v oltage i tm = 25a cr itical rate-of-r ise of comm utating (dv/dt) c C C C C v/ m s off-state v oltage (comm utating dv/dt) s f or inductiv e load (l) (switching)
p o were x, inc., 200 hillis street, y oungw ood, p ennsylv ania 15697-1800 (412) 925-7272 bcr16pm isolated t riac 16 amperes/400-600 v olts 0 transient thermal impedance characteristics (junction-to-case) cycles at 60 hz transient thermal impedance, z th(j-c) , ( c/watt) 10 -1 10 0 10 2 10 3 10 1 10 2 1 2 3 4 5 transient thermal impedance characteristics (junction-to-ambient) cycles at 60 hz transient thermal impedance, z th(j-a) , ( c/watt) 10 1 10 2 10 4 10 3 10 5 10 1 10 0 10 -1 10 2 10 3 no fins 10 -1 10 2 10 1 10 0 gate characteristics (i, ii, iii) gate current, i g , (ma) gate voltage, v g , (volts) 10 2 10 1 10 3 10 4 v gd = 0.2v v gm = 10v v gt = 1.5v i gm = 2a p gm = 5w p g(avg) = 0.5w i rgt i, i fgt i, i rgt iii 0 40 80 120 160 200 maximum surge current following rated load conditions cycles at 60 hz maximum peak surge current, i tsm , (amperes) 10 0 10 1 10 2 0 20 40 60 80 100 120 140 160 allowable case temperature vs. rms on-state current rms on-state current, i t(rms) , (amperes) case temperature, t c , ( c) 0 4 8 12 16 20 for ac control this graph nearly applies regardless of the conduction angle conduction resistive, inductive loads 0 5 10 15 20 25 30 35 40 maximum on-state power dissipation rms on-state current, i t(rms) , (amperes) maximum power dissipation, (watts) 0 20 12 18 14 8 2 6 10 16 4 360 conduction resistive, inductive loads gate trigger current vs. junction temperature (typical) junction temperature, t j , ( c) gate trigger current, (t c) gate trigger current, (25 c) x 100% -60 -20 20 60 100 140 -40 0 40 80 120 10 1 10 2 10 3 0.6 1.2 2.0 2.8 3.6 4.4 maximum on-state characteristics instantaneous on-state voltage, v t , (volts) instantaneous on-state current, i t , (amperes) 10 0 10 1 10 2 10 3 t j = 25 o c t j = 125 o c 0 20 40 60 80 100 120 140 160 allowable ambient temperature vs. rms on-state current rms on-state current, i t(rms) , (amperes) ambient temperature, t a , ( c) 0 0.8 0.4 1.2 2.0 1.6 2.4 3.2 2.8 natural convection, no fin arbitrary conduction angle resistive, inductive loads 360 t-81
p o were x, inc., 200 hillis street, y oungw ood, p ennsylv ania 15697-1800 (412) 925-7272 bcr16pm isolated t riac 16 amperes/400-600 v olts gate trigger voltage vs. junction temperature (typical) junction temperature, t j , ( c) gate trigger voltage, (t c) gate trigger voltage, (25 c) x 100% -60 -20 20 60 100 140 -40 0 40 80 120 10 1 10 2 10 3 breakover voltage vs. rate of rise of off-state voltage (typical) rate of rise of off-state voltage, dv/dt, (v/ m s) 0 20 40 60 80 100 120 140 160 breakover voltage, (dv/dt = x v/ m s) breakover voltage, (dv/dt = 1v/ m s) x 100% 10 2 10 1 10 3 10 4 t j = 125 c i quadrant iii quadrant #1 #2 repetitive peak off-state current vs. junction temperature (typical) junction temperature, t j , ( c) -60 -20 20 60 100 140 -40 0 40 80 120 10 2 10 3 10 4 10 5 repetitive peak off-state current, (t c) repetitive peak off-state current, (25 c) x 100% breakover voltage vs. junction temperature (typical) junction temperature, t j , ( c) -60 -20 20 60 100 140 -40 0 40 80 120 0 20 40 60 80 100 120 140 160 breakover voltage, (t c) breakover voltage, (25 c) x 100% commutation characteristics (typical) rate of decay of on-state commutating current, (a/ms) 10 0 10 1 10 2 10 3 10 0 10 1 10 2 10 3 critical rate of rise of off-state commutating voltage, (v/ m s) t j = 125 o c i t = 4a t = 500 m s v d = 200v f = 3hz minimum charac- teristics value v d t (dv/dt) c voltage waveform current waveform i t t (di/dt) c t i quadrant iii quadrant gate trigger current vs. gate current pulse width (typical) gate current pulse width, t w , ( m s) gate trigger current, (t w ) gate trigger current, (dc) x 100% 10 1 10 2 10 3 t j = 25 c 10 0 10 1 10 2 i fgt i i rgt i i rgt iii gate trigger characteristics test circuits test procedure i test procedure ii r g 6v 6 v a v r g 6v 6 v test procedure iii a v r g 6v 6 v a v t-82 commutating dv/dt, (dv/dt) c commutating v oltage & d par t v drm (v/msec) cur r ent w avefor m number (v olts) load t ype minimum t est condition (inductive load) bcr16pm-8l 400 l 10 tj = 125 c , BCR16PM-12l 600 l 10 rate of deca y on-state comm utating current (di/dt) c = -8a/msec; p eak off-state v oltage v d = 400v supply voltage (di / dt) c (dv / dt) c v d v d main current main voltage t t t
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